IGW60N60H3 دیتاشیت

IGW60N60H3

مشخصات دیتاشیت

نام دیتاشیت IGW60N60H3
حجم فایل 34.391 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

مشاهده دیتاشیت IGW60N60H3

دانلود دیتاشیت

سایر مستندات

IGW60N60H3 14 pages

مشخصات فنی

  • RoHS: true
  • Type: Trench Field Stop
  • Category: Triode/MOS Tube/Transistor/IGBTs
  • Datasheet: Infineon Technologies IGW60N60H3
  • Operating Temperature: -40°C~+175°C@(Tj)
  • Collector Current (Ic): 80A
  • Power Dissipation (Pd): 416W
  • Turn?on Delay Time (Td(on)): 27ns
  • Input Capacitance (Cies@Vce): 3.66nF@25V
  • Turn?on Switching Loss (Eon): 2.1mJ
  • Diode Forward Voltage (Vf@If): -
  • Total Gate Charge (Qg@Ic,Vge): 375nC@60A,15V
  • Turn?off Delay Time (Td(off)): 252ns
  • Pulsed Collector Current (Icm): 180A
  • Turn?off Switching Loss (Eoff): 1.13mJ
  • Diode Reverse Recovery Time (Trr): -
  • Collector Cut-Off Current (Ices@Vce): 40uA@600V
  • Collector-Emitter Breakdown Voltage (Vces): 600V
  • Gate-Emitter Threshold Voltage (Vge(th)@Ic): 5.1V@1mA
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Vge): 1.85V@60A,15V
  • Package: TO-247-3
  • Manufacturer: Infineon Technologies
  • Part id: 1337033

محصولات مشابه